Description
VDR4500 V Asymmetric Integrated Gate-I TGQM=4000 A Commutated ThyristorIτsM:=35×10* AVTo):1.15 V 5SHY 35L 4512rτ=0.21 m QVc-ink=2800 V Doc. No. 5SYA1233-02 June 07 ●Lowest on state voltage (2V @ 4000A) ●. Optimized for low frequency (<100 Hz) and wide temperature range ●High reliability ●High electromagnetic immunity ●Simple control interface with status feedback ●AC or DC supply voltage ●Contact factory for series connection
5SHY35L4512
